InGaAs APD-110-TO46
Avalanche photodiodes are used in situations where more sensitivity and lower noise are needed compare to standard PIN detectors. These devices use an internal gain mechanism to generate secondary electrons via impact ionization. This in turn sets off an electron avalanche which amplifies the initial signal for easier measurement. APDs are often used in applications having very low signal levels, such as LiDAR or optical communication. 4in1 Photonics offers InGaAs avalanche photodiodes (APDs) with a spectral wavelength range from 900 nm to 1700 nm. These devices provide wide dynamic range, high responsibility and low noise.
DA0917110T46 is a 110µm active diameter InGaAs APD housed in a TO46 metal package with either AR coated window cap or an integrated lens cap. It designed for wide dynamic range, high responsivity and low dark current. The APD responds optimally to both 1310nm and 1550nm, which makes the components ideal for optical communications and eye-safe range finding applications.
Features
ü Wide dynamic range
ü High responsivity
ü TO-46 packages with ball lens option
ü Fiber pigtail available
Specifications
Ts=25°C
Parameter | Symbol | Minimum | Typical | Maximum | Test Conditions |
Active diameter | D | - | 110μm | - | - |
Spectral response range | λ | 900nm | - | 1700nm | - |
Responsivity | Re | 0.85A/W | - | - | λ=1550nm, M=1 |
Dark current | ID | - | - | 15nA | VR=VBR-3 |
Breakdown voltage | VBR | 40V | 50V | ID=100μA | |
Capacitance | Ct | - | 0.9pF | 1.5pF | VR=VBR-3 |
Gain | M | 10 | - | - | λ=1550nm, Iop=1μA |
Bandwidth | Bw | 0.8GHz | 1.0GHz | - | M=10 |
Absolute Maximum Ratings
Parameter | Symbol | Minimum | Maximum | Test Conditions |
Operating temperature | Top | -40 ºC | 85ºC | No dew condensation |
Storage temperature | Tstg | -40ºC | 85ºC | No dew condensation |
Forward current | IF | - | 3mA | - |
Reverse current | IR | - | 2mA | - |
Lead soldering time | Tsol | - | 10sec. | 260ºC |
Spectrum response
Dimensions
With ball lens cap With flat window cap
