Email: sales@4in1photonics.com Tel: +1-408-520-9825

InGaAs PD-2000-TO5

4in1 Photonics provides a variety of InGaAs PIN photodiodes. These devices feature excellent responsivity from 900nm to 1700nm with active areas ranging from 0.05mm to 3.0mm. Photodiodes with active area sizes less than 1mm provide low capacitance, low dark current, and high responsivity at 1310nm and 1550nm, for high speed datacom and telecom applications. Photodiodes with active area sizes of 1mm and up provide large active areas, low noise, and high shunt resistance enabling high sensitivity for weak signals. InGaAs Photodiodes are isolated in TO-46 or TO-5 packages with either a ball lens or double-sided AR coated window, depending on the packaging. These photodiodes are ideal for a multitude of research and OEM applications including IR laser alignment, medical diagnostics, and chemical analysis. More custom sensitive areas, shapes or package styles could be provided on request.

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DP0917L02mT5 is a 2mm active diameter InGaAs PIN photodiode housed in TO5 metal package with flat window cap. It features high responsivity, low dark current and low capacitance for fast response time.


Features

ü  High responsivity

ü  Low dark current

ü  TO-5 packages with flat glass window


Specifications

Ts=25°C

Parameter

Symbol

Minimum

Typical

Maximum

Test Conditions

Active diameter

D

-

2mm

-

-

Spectral response range

λ

900nm

-

1700nm

-

Responsivity

Re

0.85A/W

-

-

λ=1310nm

0.9A/W

-

-

λ=1550nm

Bandwidth

Bw

5MHz

-

-

RL=50Ω, -3dB

Dark current

ID

-

-

5nA

VR=5V

Shunt resistance

Rsh

6MΩ

25 MΩ


VR=10mV


Absolute Maximum Ratings

Parameter

Symbol

Minimum

Maximum

Test Conditions

Operating temperature

Top

-40 ºC

85ºC

No dew condensation

Storage temperature

Tstg

-40ºC

85ºC

No dew condensation

Forward current

IF

-

10mA

-

Reverse voltage

VR

-

30V

-

Input optical power

PIn


10dBm

VR=0V

Lead soldering time

Tsol

-

10sec.

260ºC


Dimensions (mm)

image.png



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