Si APD-200-TO46

Avalanche photodiodes are used in situations where more sensitivity and lower noise are needed compare to standard PIN detectors. These devices use an internal gain mechanism to generate secondary electrons via impact ionization. This in turn sets off an electron avalanche which amplifies the initial signal for easier measurement. APDs are often used in applications having very low signal levels, such as LiDAR or ranger-finders. 4in1 Photonics offers Si avalanche photodiodes (APDs) with a spectral wavelength range from 400 nm to 1100 nm. These devices provide high operation frequency, high multiplication gain and low noise.

DA0411200TO46 is a 200µm active diameter Si APD. It designed for high volume, cost-effective commercial distance-meter, range-finder and high-speed laser scanning applications. This APD is available in TO46 package that comes with either flat window cap or an integrated lens cap.

Features

ü High speed, low noise

ü High gain at low bias voltage

ü TO46 packaged with filter windows (635nm, 650nm, 905nm, 400-1100nm)

ü RoHS-compliant

Specifications

T_s=25°C

Parameter	Symbol	Minimum	Typical	Maximum	Test Conditions
Active diameter	D	-	200μm	-	-
Spectral response range	λ	400nm	-	1100nm	-
Responsivity	R_e	35A/W	50A/W	-	λ=800nm, M=100
Response time	t_r		0.3ns	1ns	λ=800nm, R_L=50Ω
Dark current	I_D	0.05nA	0.2nA	1.0nA	M=100
Breakdown voltage	V_BR	80V	-	200V	I_R=10μA
Capacitance	C_t	-	2 pF	-	M=100
Gain	M	-	60	100	λ=800nm
V_BR Temperature coefficient	Γ	-	0.6V/ ºC	-	T_c=-40 ºC~+85 ºC

Absolute Maximum Ratings

Parameter	Symbol	Minimum	Maximum	Test Conditions
Operating temperature	T_op	-45 ºC	85ºC	No dew condensation
Storage temperature	T_stg	-45ºC	100ºC	No dew condensation
Forward current	I_F	-	1mA	-
Reverse voltage	V_R	-	190V	-
Lead soldering time	T_sol	-	10sec.	260ºC