Si PD-8000-TO8

4in1 Photonics provides a wide selection of Si PIN photodiodes with various active areas and packages. These devices cover the spectral range from 400nm to 1100nm wavelengths and feature high responsivity, low dark current and low capacitance. The Si photodiodes are available in metal TO packages, fiber pigtail or receptacle packages to accommodate various applications. More custom sensitive areas, shapes or package styles could be provided on request.

DP041108mT8 is a 8mm active diameter Si PIN photodiode housed in a TO8 metal package with flat window cap. It features high responsivity, low dark current and low capacitance for fast response time.

Features

ü High sensitivity in visible to near infrared range

ü Low dark current

ü Low capacitance

ü TO8 package

Specifications

T_s=25°C

Parameter	Symbol	Minimum	Typical	Maximum	Test Conditions
Active diameter	D	-	8mm	-	-
Spectral response range	λ	400nm	-	1100nm	-
Responsivity	R_e	0.5A/W	-	-	λ=900nm, V_R=15V
Rise Time	t_r	-	25ns	-	R_L=50Ω, V_R=15V
Dark current	I_D	-	60nA	-	V_R=15V
Capacitance	C_t	-	70pF	-	V_R=15V, f=1MHz
Operating voltage	V_R	0V	15V	-	-

Absolute Maximum Ratings

Parameter	Symbol	Minimum	Maximum	Test Conditions
Operating temperature	T_op	-40 ºC	85ºC	No dew condensation
Storage temperature	T_stg	-40ºC	85ºC	No dew condensation
Input optical power	P_In		0.3W/cm²
Reverse voltage	V_R	-	80V	-
Lead soldering time	T_sol	-	10sec.	260ºC